The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Oct. 31, 2010
Martin A. Hilkene, Gilroy, CA (US);
Matthew D. Scotney-castle, Morgan Hill, CA (US);
Peter I. Porshnev, Santa Clara, CA (US);
Roman Gouk, San Jose, CA (US);
Steven Verhaverbeke, San Francisco, CA (US);
Martin A. Hilkene, Gilroy, CA (US);
Matthew D. Scotney-Castle, Morgan Hill, CA (US);
Peter I. Porshnev, Santa Clara, CA (US);
Roman Gouk, San Jose, CA (US);
Steven Verhaverbeke, San Francisco, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the invention provide a method of reducing thermal energy accumulation during a plasma ion implantation process for forming patterns including magnetic and non-magnetic domains on a magnetically susceptible surface on a substrate. In one embodiment, a method of controlling a substrate temperature during a plasma ion implantation process includes (a) performing a first portion of a plasma ion implantation process on a substrate having a magnetically susceptible layer formed thereon in a processing chamber for a first time period, wherein a temperature of the substrate is maintained below about 150 degrees Celsius, (b) cooling the temperature of the substrate after the first portion of the plasma ion implantation process has been completed, and (c) performing a second portion of the plasma ion implantation process on the substrate, wherein the temperature of the substrate is maintained below 150 degrees Celsius.