The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Jul. 25, 2011
Michael G. Ward, Niskayuma, NY (US);
Igor V. Peidous, Loudonville, NY (US);
Sunny Chiang, Loudonville, NY (US);
Yen B. Ta, Pomona, CA (US);
Andrew Darlak, Niskayuna, NY (US);
Peter I. Porshnev, Poway, CA (US);
Swaminathan Srinivasan, Pleasanton, CA (US);
Michael G. Ward, Niskayuma, NY (US);
Igor V. Peidous, Loudonville, NY (US);
Sunny Chiang, Loudonville, NY (US);
Yen B. Ta, Pomona, CA (US);
Andrew Darlak, Niskayuna, NY (US);
Peter I. Porshnev, Poway, CA (US);
Swaminathan Srinivasan, Pleasanton, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for forming a device on a substrate are provided herein. In some embodiments, a method of forming a device on a substrate may include providing a substrate having a partially fabricated first device disposed on the substrate, the first device including a first film stack comprising a first dielectric layer and a first high-k dielectric layer disposed atop the first dielectric layer; depositing a first metal layer atop the first film stack; and modifying a first upper surface of the first metal layer to adjust a first threshold voltage of the first device, wherein the modification of the first upper surface does not extend through to a first lower surface of the first metal layer.