Michael G Ward

Title: Michael G. Ward: Innovator in Semiconductor Technology

Introduction

Michael G. Ward is a notable inventor based in Niskayuna, NY (US). He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approaches to integrated circuits.

Latest Patents

One of his latest patents is titled "Methods of forming a metal silicide region in an integrated circuit." This patent outlines a method that includes forming a silicide-resistive region in a substrate, followed by the deposition of a metal-containing layer and subsequent annealing to create a metal silicide region. Another important patent is "Methods to adjust threshold voltage in semiconductor devices." This invention describes a process for modifying the upper surface of a metal layer to adjust the threshold voltage of a semiconductor device without affecting its lower surface.

Career Highlights

Michael G. Ward is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His work focuses on advancing technologies that enhance the performance and efficiency of integrated circuits.

Collaborations

Throughout his career, Michael has collaborated with talented individuals such as Igor V. Peidous and Sunny Chiang. These collaborations have contributed to the development of innovative solutions in semiconductor technology.

Conclusion

Michael G. Ward is a distinguished inventor whose work in semiconductor technology has led to valuable patents and advancements in the field. His contributions continue to influence the industry and inspire future innovations.