The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Nov. 14, 2007
Peter I. Porshnev, San Jose, CA (US);
Majeed A. Foad, Sunnyvale, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Biagio Gallo, Palo Alto, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Andrew Nguyen, San Jose, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Amir Al-bayati, San Jose, CA (US);
Peter I. Porshnev, San Jose, CA (US);
Majeed A. Foad, Sunnyvale, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Biagio Gallo, Palo Alto, CA (US);
Hiroji Hanawa, Sunnyvale, CA (US);
Andrew Nguyen, San Jose, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Amir Al-Bayati, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The disclosure concerns a process ring for the wafer support pedestal of a toroidal source plasma immersion ion implantation reactor. The process ring improves edge uniformity by providing a continuous surface extending beyond the wafer edge, in one embodiment. In another embodiment, the process ring includes a floating electrode that functions as an extension of the wafer support electrode by RF coupling at the bias frequency.