The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Nov. 30, 2011
Daping Yao, Portland, OR (US);
Peter I. Porshnev, Poway, CA (US);
Martin A. Hilkene, Gilroy, CA (US);
Matthew D. Scotney-castle, Morgan Hill, CA (US);
Manoj Vellaikal, Sunnyvale, CA (US);
Daping Yao, Portland, OR (US);
Peter I. Porshnev, Poway, CA (US);
Martin A. Hilkene, Gilroy, CA (US);
Matthew D. Scotney-Castle, Morgan Hill, CA (US);
Manoj Vellaikal, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for quantitatively measuring the performance of a plasma immersion process are provided herein. In some embodiments, a method of quantitatively measuring the performance of a plasma immersion process, using a first substrate comprising an oxide layer deposited atop a silicon layer, may include subjecting the first substrate to a plasma immersion process in a first plasma immersion chamber to form a doped oxide layer atop the first substrate; and determining a thickness of the doped oxide layer by shining a beam of light upon a reflective surface of the doped oxide layer; detecting reflected beams of light off of the reflective surface of the doped oxide layer; and analyzing the reflected beams of light to determine the thickness of the doped oxide layer on the first substrate.