The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Jun. 01, 2011
Applicants:
Daping Yao, Portland, OR (US);
Peter I. Porshnev, San Jose, CA (US);
Inventors:
Daping Yao, Portland, OR (US);
Peter I. Porshnev, San Jose, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/3115 (2006.01); H01J 37/32 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31155 (2013.01); H01J 37/32412 (2013.01); H01L 21/0228 (2013.01); H01L 21/0234 (2013.01); H01L 21/02126 (2013.01); H01L 21/02274 (2013.01); H01L 21/02321 (2013.01); H01L 21/3105 (2013.01); H01L 21/76814 (2013.01); H01L 21/76826 (2013.01); H01L 21/76831 (2013.01); H01L 2221/1063 (2013.01);
Abstract
Methods for repairing low-k dielectrics using a plasma immersion carbon doping process are provided herein. In some embodiments, a method of repairing a low-k dielectric material disposed on a substrate having one or more features disposed through the low-k dielectric material may include depositing a conformal oxide layer on the low-k dielectric material and within the one or more features; and doping the conformal oxide layer with carbon using a plasma doping process.