Peijie Feng

Title: Peijie Feng: Innovator in High Electron Mobility Transistors and Gate-All-Around Transistors

Introduction:

Peijie Feng, based in San Diego, CA, is an esteemed inventor specializing in the field of transistors. With an impressive portfolio of 12 patents and a focus on multi-gate high electron mobility transistors (HEMTs) and gate-all-around (GAA) transistors, Feng has made significant contributions to the development of advanced electronic devices. Let's delve into his latest patents, career highlights, and collaborations to uncover the remarkable work of this talented innovator.

Latest Patents:

Feng's latest patents include two groundbreaking inventions: "Multi-gate high electron mobility transistors (HEMTs) employing tuned recess depth gates for improved device linearity" and "Gate-all-around (GAA) transistors with shallow source/drain regions and methods of fabricating the same."

In the first patent, Feng explores the concept of utilizing recessed gates within multi-gate HEMTs to enhance device linearity. By recessing at least one gate deeper into the barrier layer, the thickness of the conductive channel is reduced, positively affecting gate control and transconductance linearity. Additionally, this innovative approach allows for the creation of different turn-on voltages, further improving device performance.

The second patent focuses on GAA transistors with shallow source/drain regions, aiming to reduce parasitic capacitance between the bottom gate and these regions. Feng's inventive solution involves incorporating filler material adjacent to the bottom gate, preventing direct contact with the source and drain regions. This technique effectively decreases parasitic capacitance and contributes to the overall efficiency of GAA transistors.

Career Highlights:

Throughout his career, Peijie Feng has shown a commitment to pushing the boundaries of transistor technology. Apart from his patents, he has made notable contributions while working at Qualcomm Incorporated and various other renowned companies.

Collaborations:

Feng has worked alongside esteemed colleagues during his research and development endeavors, including Stanley Seungchul Song and Junjing Bao. These collaborations have allowed for the exchange of ideas, interdisciplinary cooperation, and the advancement of innovative transistor designs.

Conclusion:

Peijie Feng's exemplary work in the field of transistors, specifically in multi-gate HEMTs and GAA transistors, showcases his dedication to advancing electronic devices. His inventive patents demonstrate a keen understanding of improving device linearity and reducing parasitic capacitance, paving the way for more efficient and high-performance transistor technology. Feng's contributions have undoubtedly left an indelible mark on the realm of innovations and patents.