The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Jan. 28, 2020
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Peijie Feng, San Diego, CA (US);
Ye Lu, San Diego, CA (US);
Junjing Bao, San Diego, CA (US);
Chenjie Tang, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01); H01L 27/092 (2006.01); H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/0273 (2013.01); H01L 21/02532 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01);
Abstract
Certain aspects of the present disclosure generally relate to a gate-all-around (GAA) semiconductor device. The GAA semiconductor device generally includes a substrate, a first nanosheet stack structure, a second nanosheet stack structure, the first and second nanosheet stack structures being disposed above a horizontal plane of the substrate and each comprising one or more nanosheet structures, and a dielectric structure disposed between the first nanosheet stack structure and the second nanosheet stack structure.