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For the Inventor, By the Inventor

Ipswich, MA, United States of America

Patrick M Martin

USPTO Granted Patents = 17 

Average Co-Inventor Count = 3.6

ph-index = 5

Forward Citations = 60(Granted Patents)


Location History:

  • Capitola, CA (US) (2017)
  • Ipswich, MA (US) (2012 - 2018)

Company Filing History:

goldMedal13 out of 916 
 
Varian Semiconductor Equipment Associates, Inc.
 patents
silverMedal4 out of 13,684 
 
Applied Materials, Inc.
 patents

Years Active: 2012-2018

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17 patents (USPTO):
1. 10026613 - Utilization of angled trench for effective aspect ratio trapping of defects in strain-relaxed heteroepitaxy of semiconductor films (2018-07-17),
2. 9799531 - Utilization of angled trench for effective aspect ratio trapping of defects in strain-relaxed heteroepitaxy of semiconductor films (2017-10-24),
3. 9767987 - Method and system for modifying substrate relief features using ion implantation (2017-09-19),
4. 9716012 - Methods of selective layer deposition (2017-07-25),
5. 9425027 - Methods of affecting material properties and applications therefor (2016-08-23),
6. 9406507 - Utilization of angled trench for effective aspect ratio trapping of defects in strain relaxed heteroepitaxy of semiconductor films (2016-08-02),
7. 9340877 - Method and system for modifying photoresist using electromagnetic radiation and ion implantation (2016-05-17),
8. 8974683 - Method and system for modifying resist openings using multiple angled ions (2015-03-10),
9. 8952344 - Techniques for processing photoresist features using ions (2015-02-10),
10. 8937019 - Techniques for generating three dimensional structures (2015-01-20),
11. 8912097 - Method and system for patterning a substrate (2014-12-16),
12. 8778603 - Method and system for modifying substrate relief features using ion implantation (2014-07-15),
13. 8698109 - Method and system for controlling critical dimension and roughness in resist features (2014-04-15),
14. 8460569 - Method and system for post-etch treatment of patterned substrate features (2013-06-11),
15. 8435727 - Method and system for modifying photoresist using electromagnetic radiation and ion implantation (2013-05-07),

Title: The Innovations of Patrick M Martin

Introduction

Patrick M Martin is a notable inventor based in Ipswich, MA (US). He holds a total of 17 patents that reflect his significant contributions to the field of semiconductor technology. His work primarily focuses on reducing dislocation density in heteroepitaxial growth films, which is crucial for advancing microelectronic applications.

Latest Patents

One of his latest patents is titled "Utilization of angled trench for effective aspect ratio trapping of defects in strain-relaxed heteroepitaxy of semiconductor films." This patent discusses methods to reduce dislocation density in heteroepitaxial growth films. The embodiments of this patent describe how tilted or angled sidewalls of high aspect ratio trenches can help terminate defects in crystalline materials. This innovative approach is particularly beneficial for microelectronic applications, such as high mobility channels using Group III-V elements in field effect transistors.

Career Highlights

Throughout his career, Patrick has worked with prominent companies in the semiconductor industry, including Varian Semiconductor Equipment Associates, Inc. and Applied Materials, Inc. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to advancements in semiconductor technology.

Collaborations

Patrick has collaborated with notable professionals in his field, including Ludovic Godet and Joseph C Olson. These collaborations have further enriched his work and have led to significant advancements in semiconductor research and development.

Conclusion

Patrick M Martin's contributions to the field of semiconductor technology are noteworthy, with his innovative patents paving the way for advancements in microelectronics. His work continues to influence the industry and inspire future innovations.

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