The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
May. 14, 2012
Ludovic Godet, Boston, MA (US);
Christopher Hatem, Hampton, NH (US);
Deepak Ramappa, Cambridge, MA (US);
Xianfeng LU, Beverly, MA (US);
Anthony Renau, West Newbury, MA (US);
Patrick Martin, Ipswich, MA (US);
Ludovic Godet, Boston, MA (US);
Christopher Hatem, Hampton, NH (US);
Deepak Ramappa, Cambridge, MA (US);
Xianfeng Lu, Beverly, MA (US);
Anthony Renau, West Newbury, MA (US);
Patrick Martin, Ipswich, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
Methods of affecting a material's properties through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier. In this way, properties such as resistance to chemicals, adhesiveness, hydrophobicity, and hydrophilicity, may be affected. These methods can be applied to a variety of technologies. In some cases, ion implantation is used in the manufacture of printer heads to reduce clogging by increasing the materials hydrophobicity. In other embodiments, MEMS and NEMS devices are produced using ion implantation to change the properties of fluid channels and other structures. In addition, ion implantation can be used to affect a material's resistance to chemicals, such as acids.