The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Aug. 19, 2010
Patrick M. Martin, Ipswich, MA (US);
Steven Carlson, Hampton Falls, NH (US);
Choong-young OH, Gyeonggi-do, KR;
Jung-wook Park, Gyeonggi-do, KR;
Patrick M. Martin, Ipswich, MA (US);
Steven Carlson, Hampton Falls, NH (US);
Choong-Young Oh, Gyeonggi-do, KR;
Jung-Wook Park, Gyeonggi-do, KR;
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A method of patterning a substrate comprises providing an array of resist features defined by a first pitch and a first gap width between adjacent resist features. Particles are introduced into the array of resist features, wherein the array of resist features becomes hardened. The introduction of particles may cause a reduction in critical dimension of the resist features. Sidewalls are provided on side portions of hardened resist features. Subsequent to the formation of the sidewalls, the hardened resist features are removed, leaving an array of isolated sidewalls disposed on the substrate. The sidewall array provides a mask for double patterning of features in the substrate layers disposed below the sidewalls, wherein an array of features formed in the substrate has a second pitch equal to half that of the first pitch.