Gyeonggi-do, South Korea

Choong-Young Oh

This inventor holds 1 USPTO granted patent. Top assignee: Varian Semiconductor Equipment Associates, Inc.. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Choong-Young Oh. Retrieved from https://idiyas.com/inventor/choong-young-oh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Choong-Young Oh and Substrate Patterning Innovation.

Introduction

Choong-Young Oh is an inventor associated with Gyeonggi-do, South Korea, and Varian Semiconductor Equipment Associates, Inc. His patent work addresses techniques for creating finely patterned features in substrate layers.

Latest Patents

The available information lists 1 patent for Oh: “Method and System for Patterning a Substrate.” The invention describes introducing particles into an array of resist features, which hardens the features and may reduce their critical dimensions. Sidewalls are then formed along the hardened resist features. After the resist features are removed, the remaining sidewalls create a mask for double patterning. This process can produce substrate features at a pitch half the pitch of the original resist array.

Career Highlights

Oh’s listed patent reflects work on semiconductor patterning, where precise control of feature size and spacing is important. The method uses an array of isolated sidewalls to support the formation of denser patterns in underlying substrate layers.

Collaborations

The provided information identifies Patrick M. Martin and Steven Carlson as Oh’s coworkers. Their shared association with Varian Semiconductor Equipment Associates, Inc. places the invention within a semiconductor equipment and process-development context.

Conclusion

Choong-Young Oh’s patent describes a sidewall-based double-patterning method designed to create more closely spaced substrate features, highlighting his contribution to semiconductor patterning technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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