The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

May. 28, 2014
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Ludovic Godet, Sunnyvale, CA (US);

Patrick M. Martin, Ipswich, MA (US);

Timothy J. Miller, Ipswich, MA (US);

Vikram Singh, North Andover, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01L 21/265 (2006.01); H01L 21/263 (2006.01); H01J 37/32 (2006.01); H01L 21/027 (2006.01); H01L 21/223 (2006.01); G03F 7/40 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01J 37/317 (2013.01); G03F 7/40 (2013.01); H01J 37/3171 (2013.01); H01J 37/3174 (2013.01); H01J 37/32357 (2013.01); H01J 37/32422 (2013.01); H01J 37/32623 (2013.01); H01L 21/0273 (2013.01); H01L 21/2236 (2013.01); H01L 21/263 (2013.01); H01L 21/265 (2013.01); H01L 29/66787 (2013.01);
Abstract

A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the process chamber having a plasma sheath adjacent to the first side of the substrate. The method may further comprise modifying a shape of a boundary between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the substrate facing the plasma, wherein ions from the plasma impinge on the patterned resist features over a wide angular range during a first exposure.


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