Tournefeuille, France

Patrice Besse

USPTO Granted Patents = 42 

 

Average Co-Inventor Count = 2.9

ph-index = 6

Forward Citations = 95(Granted Patents)


Location History:

  • Toulouse, FR (2007 - 2017)
  • Tournfeuille, FR (2016 - 2018)
  • Tournefeuille, FR (2015 - 2021)

Company Filing History:


Years Active: 2007-2025

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42 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Patrice Besse in the Field of ESD Protection Devices

Introduction

Patrice Besse is a notable inventor based in Tournefeuille, France. With a prolific record of 41 patents, he has made significant contributions to the field of electronics, particularly in the development of ESD (Electrostatic Discharge) protection devices. His inventions reflect a commitment to enhancing circuit protection and improving device reliability under various electrical conditions.

Latest Patents

Among his recent innovations is the "Single-stack bipolar-based ESD protection device." This inventive device serves as a single-stage voltage clamp, exhibiting high holding voltage characteristics, reaching approximately 40V. It features two p-n-p structures connected in series with an n-p-n structure, enabling effective ESD protection. The design incorporates a low-voltage terminal that connects to a circuit’s ground and a high-voltage terminal linked to a voltage source. This inventive structure incorporates a highly doped floating (n+)/(p+) junction region within a heavily doped base of the low-voltage-side p-n-p structure, resulting in exceptional holding voltage capabilities without the complexity of using two devices in series.

Additionally, he has developed an "ESD protection device, semiconductor device that includes an ESD protection device, and method of manufacturing same." This patent describes an ESD protection apparatus for safeguarding integrated circuits against ESD events. It features a first terminal connected to an input/output pad of the IC and a second terminal linked to ground. This patent includes the implementation of a silicon-controlled rectifier device in collaboration with a p-n-p transistor, promoting efficiency and improved protection mechanisms.

Career Highlights

Patrice Besse has had a remarkable career, during which he has collaborated with prominent companies in the semiconductor industry, including NXP USA, Inc. and Freescale Semiconductor, Inc. His work in these organizations has been integral in advancing ESD protection technologies, impacting a wide array of electronic applications.

Collaborations

Throughout his career, Patrice has worked alongside esteemed colleagues, including Jean Philippe Laine and Alain Salles. These collaborations have enriched the development process of his inventions, fostering a productive environment for innovation and technological advancement.

Conclusion

In conclusion, Patrice Besse stands as a distinguished inventor whose contributions to ESD protection devices have had a profound impact on the field of electronics. His relentless pursuit of innovation and collaboration with industry leaders has led to the development of cutting-edge technologies that improve device reliability and performance. As he continues his work, his legacy will undoubtedly inspire future generations of inventors and engineers.

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