The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Apr. 19, 2018
Nxp Usa, Inc., Austin, TX (US);
Evgueniy Nikolov Stefanov, Vieille Toulouse, FR;
Patrice Besse, Tournefeuille, FR;
Jean Philippe Laine, Saint Lys, FR;
NXP USA, Inc., Austin, TX (US);
Abstract
Semiconductor device and methods for making the devices includes a buried layer of a first conductivity in a substrate in which a distance between two adjacent ends can be selected to achieve a desired breakdown voltage. A deep well having a first doping concentration of a second conductivity type is implanted in an epitaxial layer above the two adjacent ends of the buried layer. A patterned doped region is formed in the deep well and extending into the epitaxial layer above and separated a distance from the two adjacent ends of the buried lay. The patterned doped region has a second doping concentration of the second conductivity type that is greater than the first doping concentration.