The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2019

Filed:

Feb. 25, 2016
Applicant:

Freescale Semiconductor, Inc., Austin, TX (US);

Inventors:

Philippe Jean-Marie Lucien Givelin, Leguevin, FR;

Patrice Besse, Tournefeuille, FR;

Serge De Bortoli, Ayguesvives, FR;

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H02H 9/00 (2006.01); G06F 13/40 (2006.01);
U.S. Cl.
CPC ...
H02H 9/045 (2013.01); H02H 9/004 (2013.01); H02H 9/046 (2013.01); G06F 13/4081 (2013.01); H02H 9/04 (2013.01);
Abstract

An overcharge protection circuit comprises a first series of first terminals a second series of second terminals, a first overvoltage protection device connected between each consecutive pair of first terminals, a current balancing device connected between each consecutive pair of second terminals, and a second overvoltage protection device connected between a first terminal and a second terminal. The second overvoltage protection device is configured to pass a current if a voltage over the second overvoltage protection device exceeds a threshold. The second overvoltage protection device may comprise a bidirectional ESD diode, while both the first overvoltage protection device and the second overvoltage protection device may comprise a unidirectional ESD diode.


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