Enter inventor name

Pan Huang

USPTO Granted Patents = 25 (Patent Applications = 3)

EPO Patents = 5 (Patent Applications = 6)

Average Co-Inventor Count = 5.9

ph-index = 3

Forward Citations = 19(Granted Patents)

Location History:

Wuhan, CN (2021 - 2024)
Hubei, CN (2021 - 2024)

Company Filing History:

24 out of 1,157

Yangtze Memory Technologies Co., Ltd.

Years Active: 2021-2024

Loading Chart...

25 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12052871 - Three-dimensional memory and fabrication method thereof (2024-07-30),

2. 12035523 - Three-dimensional memory devices and fabricating methods thereof (2024-07-09),

3. 11963356 - Three-dimensional memory device without gate line slits and method for forming the same (2024-04-16),

4. 11805650 - Three-dimensional memory device with source structure and methods for forming the same (2023-10-31),

5. 11792980 - Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same (2023-10-17),

6. 11785772 - Three-dimensional memory device with source structure and methods for forming the same (2023-10-10),

7. 11765897 - Three-dimensional memory device without gate line slits and method for forming the same (2023-09-19),

8. 11758723 - Three-dimensional memory device with source contacts connected by an adhesion layer and methods for forming the same (2023-09-12),

9. 11716850 - Three-dimensional memory device with support structures in gate line slits and methods for forming the same (2023-08-01),

10. 11653495 - Three-dimensional memory device with source structure and methods for forming the same (2023-05-16),

11. 11437398 - Three-dimensional memory device with source structure and methods for forming the same (2022-09-06),

12. 11411014 - Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same (2022-08-09),

13. 11271007 - Three-dimensional memory and fabrication method thereof (2022-03-08),

14. 11257831 - Three-dimensional memory devices and fabricating methods thereof (2022-02-22),

15. 11251195 - Three-dimensional memory device without gate line slits and method for forming the same (2022-02-15),

Title: Pan Huang: A Pioneer in Three-Dimensional Memory Technologies

Introduction

Pan Huang, an innovative inventor based in Wuhan, China, has made significant contributions to the field of memory technology, holding a remarkable portfolio of 25 patents. His work primarily focuses on the development of advanced three-dimensional (3D) memory devices and their fabrication methods, demonstrating his expertise and commitment to pushing the boundaries of technology.

Latest Patents

Among his latest patents, Pan Huang has developed a novel approach in the "Three-dimensional memory and fabrication method thereof." In this patent, he discloses embodiments of a 3D memory device along with the fabrication methods necessary for its creation. The process begins with forming an alternating dielectric stack on a substrate and creating channel holes that penetrate this stack, revealing portions of the substrate below. Furthermore, the method involves the formation of top select gate openings and slit openings, which enhance the design and functionality of the memory device. His innovations enable the replacement of the dielectric stack with a film stack of alternating conductive and dielectric layers, leading to improved efficiency and performance in memory technology.

Career Highlights

Throughout his career, Pan Huang has worked at prominent organizations, most notably Yangtze Memory Technologies Co., Ltd. and Hubei University. His experience in these institutions has enabled him to refine his skills in research and development, laying the groundwork for his numerous innovative patents. His relentless pursuit of knowledge and technology advancement continues to inspire those in the field.

Collaborations

Pan Huang has collaborated with esteemed colleagues such as Wei Xu and Wenbin Zhou, further enriching his innovative endeavors. These collaborations not only enhance his research output but also contribute to the collective growth of knowledge in the domain of memory technologies.

Conclusion

Pan Huang stands as a testament to the power of innovation in the tech industry. With a substantial number of patents and groundbreaking work in the field of three-dimensional memory devices, he continues to shape the future of technology through his inventive spirit and dedication to research. His contributions will undoubtedly pave the way for further developments in the memory technology landscape.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com