Wuhan, China

Pan Huang

This inventor holds 26 USPTO granted patents and 2 published patent applications and 5 EPO patents, primarily in Three-Dimensional Memory. Top assignees: Yangtze Memory Technologies Co., Ltd., Hubei University, Yangtze Memory Technologies., Ltd.. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pan Huang. Retrieved from https://idiyas.com/inventor/pan-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 

% Patents Active = 96.2

 

Average Co-Inventor Count = 5.9

ph-index = 3

Forward Citations = 24(Granted Patents)


Location History:

  • Wuhan, CN (2021 - 2024)
  • Hubei, CN (2021 - 2024)

Company Filing History:


Years Active: 2021-2026

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Areas of Expertise:
Three-Dimensional Memory
Fabrication Method
Source Structure
Gate Line Slits
Contact Structures
Conductive Portions
Adhesion Layer
Memory Device
26 patents (USPTO):Explore Patents

Title: Pan Huang: A Pioneer in Three-Dimensional Memory Technologies

Introduction

Pan Huang, an innovative inventor based in Wuhan, China, has made significant contributions to the field of memory technology, holding a remarkable portfolio of 25 patents. His work primarily focuses on the development of advanced three-dimensional (3D) memory devices and their fabrication methods, demonstrating his expertise and commitment to pushing the boundaries of technology.

Latest Patents

Among his latest patents, Pan Huang has developed a novel approach in the "Three-dimensional memory and fabrication method thereof." In this patent, he discloses embodiments of a 3D memory device along with the fabrication methods necessary for its creation. The process begins with forming an alternating dielectric stack on a substrate and creating channel holes that penetrate this stack, revealing portions of the substrate below. Furthermore, the method involves the formation of top select gate openings and slit openings, which enhance the design and functionality of the memory device. His innovations enable the replacement of the dielectric stack with a film stack of alternating conductive and dielectric layers, leading to improved efficiency and performance in memory technology.

Career Highlights

Throughout his career, Pan Huang has worked at prominent organizations, most notably Yangtze Memory Technologies Co., Ltd. and Hubei University. His experience in these institutions has enabled him to refine his skills in research and development, laying the groundwork for his numerous innovative patents. His relentless pursuit of knowledge and technology advancement continues to inspire those in the field.

Collaborations

Pan Huang has collaborated with esteemed colleagues such as Wei Xu and Wenbin Zhou, further enriching his innovative endeavors. These collaborations not only enhance his research output but also contribute to the collective growth of knowledge in the domain of memory technologies.

Conclusion

Pan Huang stands as a testament to the power of innovation in the tech industry. With a substantial number of patents and groundbreaking work in the field of three-dimensional memory devices, he continues to shape the future of technology through his inventive spirit and dedication to research. His contributions will undoubtedly pave the way for further developments in the memory technology landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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