The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2024
Filed:
Nov. 22, 2021
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Wenxiang Xu, Hubei, CN;
Haohao Yang, Hubei, CN;
Pan Huang, Hubei, CN;
Ping Yan, Hubei, CN;
Zongliang Huo, Hubei, CN;
Wenbin Zhou, Hubei, CN;
Wei Xu, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Abstract
Embodiments of three-dimensional (3D) memory devices and fabricating methods thereof are disclosed. The method includes: forming an alternating dielectric stack on a substrate; forming a structure strengthen plug in an upper portion of the alternating dielectric stack, wherein the structure strengthen plug has a narrow support body and two enlarged connecting portions; forming a gate line silt in the alternating dielectric stack to expose a sidewall of one enlarged connecting portion of the structure strengthen plug; and forming a gate line slit structure in the gate line slit including an enlarged end portion connected to the one enlarged connecting portion of the structure strengthen plug.