The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Nov. 22, 2021
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Ji Xia, Wuhan, CN;

Wei Xu, Wuhan, CN;

Pan Huang, Wuhan, CN;

Wenxiang Xu, Wuhan, CN;

Beihan Wang, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H10B 41/27 (2023.01); G11C 5/04 (2006.01); G11C 5/06 (2006.01); G11C 16/04 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); G11C 5/04 (2013.01); G11C 5/06 (2013.01); G11C 16/04 (2013.01); H01L 21/76838 (2013.01); H01L 23/528 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01); H10B 43/27 (2023.02);
Abstract

Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a method for forming a 3D memory device includes forming a first source contact portion in a substrate, forming a dielectric stack over the first source contact portion, and forming a slit opening extending in the dielectric stack and exposing the first source contact portion. The method also includes forming a plurality of conductor layers through the slit opening and form a second source contact portion in the slit opening and in contact with the first source contact portion.


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