The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Jan. 13, 2021
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Qingqing Wang, Wuhan, CN;
Wei Xu, Wuhan, CN;
Pan Huang, Wuhan, CN;
Ping Yan, Wuhan, CN;
Zongliang Huo, Wuhan, CN;
Wenbin Zhou, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuha, CN;
Abstract
A method for forming a three-dimensional (3D) memory device includes forming a cut structure in a stack structure. The stack structure includes interleaved a plurality of initial sacrificial layers and a plurality of initial insulating layers. The method also includes removing portions of the stack structure adjacent to the cut structure to form a slit structure and an initial support structure. The initial support structure divides the slit structure into a plurality of slit openings. The method further includes forming a plurality of conductor portions in the initial support structure through the plurality of slit openings. The method also includes forming a source contact in each of the plurality of slit openings. The method also includes removing portions of the initial support structure to form a support structure. The support structure includes an adhesion portion extending through the support structure. In addition, the method includes forming an adhesion layer over the source contact in each of the plurality of slit openings. At least two adhesion layers are conductively connected to the adhesion portion extending through the support structure.