Qingqing Wang

Title: Qingqing Wang: Innovator in Three-Dimensional Memory Devices

Introduction

Qingqing Wang is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of three-dimensional memory devices. With a total of 4 patents to his name, Wang continues to push the boundaries of innovation in this critical area of technology.

Latest Patents

Wang's latest patents include groundbreaking work on three-dimensional memory devices and methods for fabricating them. One of his notable inventions describes a method for forming a 3D memory device that involves creating an alternating dielectric stack on a substrate. This method includes the formation of channel structures and dummy channel structures that vertically penetrate the dielectric stack. The channel structures are strategically located in a core region, while the dummy structures are positioned in a staircase region. Additionally, he has developed a gate line silt structure that extends vertically and laterally, featuring a narrow portion with a reduced width.

Another significant patent focuses on a contact structure and the method of forming it within a semiconductor device. This invention outlines a trench formed in a dielectric layer, which is filled with a trench filler layer. A conductive layer is placed over this filler, and a second dielectric layer is positioned within the trench. The contact structure is designed to connect to the conductive layer through a hole in the second dielectric layer, enhancing the functionality of semiconductor devices.

Career Highlights

Qingqing Wang is currently employed at Yangtze Memory Technologies Co., Ltd., where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and effective for various applications.

Collaborations

Wang collaborates with talented colleagues, including Wei Xu and Wenbin Zhou, who contribute to the innovative environment at Yangtze Memory Technologies Co., Ltd. Their combined efforts foster a culture of creativity and technological advancement.

Conclusion

Qingqing Wang is a key figure in the development of three-dimensional memory devices, with a strong portfolio of patents that reflect his innovative spirit. His contributions to semiconductor technology are paving the way for future advancements in the field.