The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Nov. 20, 2019
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Qingqing Wang, Wuhan, CN;
Wei Xu, Wuhan, CN;
Pan Huang, Wuhan, CN;
Ping Yan, Wuhan, CN;
Zongliang Huo, Wuhan, CN;
Wenbin Zhou, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
A three-dimensional (3D) memory device includes a memory stack over a substrate. The memory stack includes interleaved conductor layers and insulating layers. The 3D memory device also includes channel structures extending vertically in the memory stack. The 3D memory device further includes a source structure extending in the memory stack. The source structure includes first and second source contacts separated by a support structure. The source structure also includes an adhesion layer. At least a portion of the adhesion layer is between the first and second source contacts and conductively connects the first and second source contacts.