Yangtze Memory Technologies Co., Ltd.

Qingqing Wang

Wei Xu

Wenbin Zhou

Zongliang Huo

Ping Yan

Pan Huang

Huichao Liu

Jinxing Chen

Guanglong Fan

A method for forming a 3D memory device is disclosed. The method includes forming an alternating dielectric stack on a substrate. Then a plurality of channel structures and dummy channel structures vertically penetrating the alternating dielectric stack are formed, The channel structures are located in a core region, and the dummy channel structures are located in a staircase region. A gate line silt structure is formed vertically penetrating the alternating dielectric stack and laterally extending in a first direction. The gate line silt structure includes a narrow portion that has a reduced width along a second direction different from the first direction.

Three-dimensional memory devices and fabricating methods thereof

Aspects of the disclosure provide a semiconductor device. The semiconductor device can include a trench formed in a first dielectric layer, a trench filler layer that fills a portion of the trench, a conductive layer over the trench filler layer, and a second dielectric layer over the conductive layer. The second dielectric layer is disposed in the trench. The semiconductor device can also include a contact structure configured to connect to the conductive layer through a hole in the second dielectric layer.

Contact structure and method of forming the same

A method for forming a three-dimensional (3D) memory device includes forming a cut structure in a stack structure. The stack structure includes interleaved a plurality of initial sacrificial layers and a plurality of initial insulating layers. The method also includes removing portions of the stack structure adjacent to the cut structure to form a slit structure and an initial support structure. The initial support structure divides the slit structure into a plurality of slit openings. The method further includes forming a plurality of conductor portions in the initial support structure through the plurality of slit openings. The method also includes forming a source contact in each of the plurality of slit openings. The method also includes removing portions of the initial support structure to form a support structure. The support structure includes an adhesion portion extending through the support structure. In addition, the method includes forming an adhesion layer over the source contact in each of the plurality of slit openings. At least two adhesion layers are conductively connected to the adhesion portion extending through the support structure.

Three-dimensional memory device with source contacts connected by an adhesion layer and methods for forming the same

A three-dimensional (3D) memory device includes a memory stack over a substrate. The memory stack includes interleaved conductor layers and insulating layers. The 3D memory device also includes channel structures extending vertically in the memory stack. The 3D memory device further includes a source structure extending in the memory stack. The source structure includes first and second source contacts separated by a support structure. The source structure also includes an adhesion layer. At least a portion of the adhesion layer is between the first and second source contacts and conductively connects the first and second source contacts.

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Wuhan, China

Qingqing Wang