The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Sep. 11, 2020
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Abstract
A method for forming a 3D memory device is disclosed. The method includes forming an alternating dielectric stack on a substrate. Then a plurality of channel structures and dummy channel structures vertically penetrating the alternating dielectric stack are formed, The channel structures are located in a core region, and the dummy channel structures are located in a staircase region. A gate line silt structure is formed vertically penetrating the alternating dielectric stack and laterally extending in a first direction. The gate line silt structure includes a narrow portion that has a reduced width along a second direction different from the first direction.