The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
Nov. 16, 2021
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Wenxiang Xu, Wuhan, CN;
Wei Xu, Wuhan, CN;
Pan Huang, Wuhan, CN;
Ping Yan, Wuhan, CN;
Zongliang Huo, Wuhan, CN;
Wenbin Zhou, Wuhan, CN;
Ji Xia, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a memory stack having interleaved a plurality of conductor layers and a plurality of insulating layers, a plurality of channel structures extending in the memory stack, and a source structure extending in the memory stack. The source structure includes a plurality of source contacts each in a respective insulating structure. Two adjacent source contacts are conductively connected to one another by a connection layer, the connection layer includes a pair of first portions being over the two adjacent ones of the plurality of source contacts and a second portion between the pair of first portions. A support structure is between the two adjacent source contacts. The support structure includes a cut structure over interleaved a plurality of conductor portions and a plurality of insulating portions.