The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2024

Filed:

Dec. 20, 2021
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Zongliang Huo, Wuhan, CN;

Haohao Yang, Wuhan, CN;

Wei Xu, Wuhan, CN;

Ping Yan, Wuhan, CN;

Pan Huang, Wuhan, CN;

Wenbin Zhou, Wuhan, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02);
Abstract

Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a stack structure including a memory block including a plurality of memory cells. The 3D memory device also includes a first top select structure and a bottom select structure in the memory block and aligned with each other vertically; and a second top select structure in the memory block is separated from the first top select structure by at least one of the plurality of memory cells. The first top select structure, the bottom select structure, and the second top select structure each includes an insulating material.


Find Patent Forward Citations

Loading…