Tokyo, Japan

Noriaki Fujiki


Average Co-Inventor Count = 3.1

ph-index = 6

Forward Citations = 176(Granted Patents)


Location History:

  • Itami, JP (2001)
  • Hyogo, JP (1994 - 2002)
  • Tokyo, JP (2003 - 2008)

Company Filing History:


Years Active: 1994-2008

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13 patents (USPTO):Explore Patents

Title: Noriaki Fujiki: Innovator in Semiconductor Technology

Introduction

Noriaki Fujiki is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work focuses on innovative semiconductor devices and manufacturing methods that enhance performance and reliability.

Latest Patents

Fujiki's latest patents include a semiconductor device that features fuse elements and a bonding pad. This device comprises a lower-layer substrate, a fuse positioned above it, and a silicon oxide film that covers the fuse and part of the substrate. Notably, the silicon oxide film is thicker than the fuse, with an opening opposite the fuse. Another significant patent details a method for manufacturing a semiconductor device that includes bonding pads and fuse elements. This method involves forming insulating films, etching aluminum layers to create bonding pads and fuse elements, and utilizing plasma chemical vapor deposition for additional insulating layers.

Career Highlights

Throughout his career, Noriaki Fujiki has worked with notable companies such as Mitsubishi Electric Corporation and Renesas Technology Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Fujiki has collaborated with esteemed colleagues, including Takashi Yamashita and Shigeru Harada. Their combined expertise has contributed to advancements in the semiconductor field.

Conclusion

Noriaki Fujiki's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced semiconductor devices.

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