The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2003
Filed:
Jul. 23, 2001
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
To provide excellent reliability and high yield of a semiconductor device that has a multi-wiring structure by using a fluorine-containing silicon oxide film as an interlayer insulating film. A fluorine-containing silicon oxide film is formed so as to cover a lower layer metal wiring. A TEOS film is formed on the fluorine-containing silicon oxide film. After planarizing the TEOS film with the CMP method, an SiH -based silicon oxide film that is suitable for capturing fluorine is formed on the TEOS film. Metal wirings are formed on the SiH -based silicon oxide film. A predetermined heat treatment is performed to capture fluorine inside the SiH -based silicon oxide film. The SiH -based silicon oxide film is patterned to the same pattern as the metal wirings. After diffusing fluorine into the atmosphere from the exposed area of the TEOS film, a silicon nitride film is formed on the metal wirings.