Tokyo, Japan

Nobuyoshi Hattori

This inventor holds 18 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignees: Mitsubishi Denki Kabushiki Kaisha, Renesas Technology Corp., Ricoh Company, Ltd.. Active years: 1990-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nobuyoshi Hattori. Retrieved from https://idiyas.com/inventor/nobuyoshi-hattori

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 61.1

Average Co-Inventor Count = 2.9

ph-index = 10

Forward Citations = 183(Granted Patents)


Location History:

  • Itami, JP (1990 - 2010)
  • Tokyo, JP (2000 - 2020)

Company Filing History:


Years Active: 1990-2020

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Areas of Expertise:
Information Processing Device
Imaging Device
Semiconductor Device
SOI Wafer
Defect Analysis
Quality Management
Inspection Data
Cleaning Device
Process Control
Continuous Monitoring
Particle Counting
18 patents (USPTO):Explore Patents

Title: Nobuyoshi Hattori: Innovator in Information Processing and Semiconductor Technology

Introduction

Nobuyoshi Hattori is a prominent inventor based in Tokyo, Japan. He holds a total of 18 patents, showcasing his significant contributions to the fields of information processing and semiconductor technology. His innovative work has had a lasting impact on various technological advancements.

Latest Patents

Hattori's latest patents include an information processing device and a method of manufacturing a semiconductor device. The information processing device is designed to transmit a file stored in a memory medium to a terminal. It features a specifying information creating unit that generates specifying information for identifying files, a transmitting unit for sending this information to the terminal, and a file transmitting unit that delivers the specified file. Additionally, his method of manufacturing a semiconductor device involves forming low concentration layers on a semiconductor substrate using a gate electrode as a mask. This process includes the formation of sidewalls and the implantation of nitrogen to create a crystallization-control region, ultimately leading to the formation of high concentration layers for a source and a drain.

Career Highlights

Throughout his career, Hattori has worked with notable companies such as Mitsubishi Electric Corporation and Renesas Technology Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking technologies in the industry.

Collaborations

Hattori has collaborated with esteemed colleagues, including Toshiaki Mugibayashi and Hideki Naruoka. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Nobuyoshi Hattori's contributions to information processing and semiconductor technology are noteworthy. His extensive patent portfolio and collaborations with industry leaders highlight his role as a significant innovator in his field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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