The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Sep. 09, 2003
Toshiaki Iwamatsu, Tokyo, JP;
Takashi Ipposhi, Tokyo, JP;
Hideki Naruoka, Tokyo, JP;
Nobuyoshi Hattori, Tokyo, JP;
Shigeto Maegawa, Tokyo, JP;
Yasuo Yamaguchi, Tokyo, JP;
Takuji Matsumoto, Tokyo, JP;
Toshiaki Iwamatsu, Tokyo, JP;
Takashi Ipposhi, Tokyo, JP;
Hideki Naruoka, Tokyo, JP;
Nobuyoshi Hattori, Tokyo, JP;
Shigeto Maegawa, Tokyo, JP;
Yasuo Yamaguchi, Tokyo, JP;
Takuji Matsumoto, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor layer, a plurality of semiconductor elements formed on the semiconductor layer, and an isolation film provided in a surface of the semiconductor layer, semiconductor elements being electrically isolated from each other by the isolation film. The semiconductor device also includes a PN junction portion provided under the isolation film and formed by two semiconductor regions of different conductivity types in the semiconductor layer. The isolation film includes a nitride film provided in a position corresponding to a top of the PN junction portion and has a substantially uniform thickness across the two semiconductor regions and an upper oxide film and a lower oxide film which are provided in upper and lower portions of the nitride film. The surface of the semiconductor layer is silicidized in such a state that a surface of the isolation film is exposed.