The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 1996
Filed:
Jun. 06, 1994
Yoshitsugu Nakagawa, Ohtsu, JP;
Fusami Soeda, Ohtsu, JP;
Naohiko Fujino, Amagasaki, JP;
Isamu Karino, Amagasaki, JP;
Osamu Wada, Amagasaki, JP;
Hiroshi Kurokawa, Amagasaki, JP;
Koichiro Hori, Itami, JP;
Nobuyoshi Hattori, Itami, JP;
Masahiro Sekine, Itami, JP;
Masashi Ohmori, Itami, JP;
Kazuo Kuramoto, Amagasaki, JP;
Junji Kobayashi, Amagasaki, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Method for detecting and examining a slightly irregular surface state is provided which includes the steps of: illuminating a surface of a sample with light beam for detecting the slightly irregular surface state; observing a variation of the light beam occurring due to the slightly irregular surface state to specify the location of the slightly irregular surface state in an x-y plane of the sample; making the location of a probe needle of a scanning probe microscope and the location of the slightly irregular surface state on the sample coincide with each other; and measuring a three-dimensional image of the slightly irregular surface state by means of the scanning probe microscope. The scanning probe microscope for use in the aforementioned method and a method for fabricating a semiconductor device or a liquid crystal display device which utilizes the aforementioned method are also provided.