Company Filing History:

46 out of 52,711

Kabushiki Kaisha Toshiba

patents

3 out of 2,955

Toshiba Memory Corporation

patents

Years Active: 2001-2019

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49 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 10276590 - Method for manufacturing a semiconductor device including a vertical channel between stacked electrode layers and an insulating layer (2019-04-30),

2. 9917099 - Semiconductor device having vertical channel between stacked electrode layers and insulating layers (2018-03-13),

3. 9825100 - Nonvolatile semiconductor memory device (2017-11-21),

4. 9536616 - Non-volatile memory device and method for reading out data (2017-01-03),

5. 9379164 - Integrated circuit device (2016-06-28),

6. 9136468 - Nonvolatile semiconductor memory device (2015-09-15),

7. 9030881 - Nonvolatile semiconductor memory device (2015-05-12),

8. 9019777 - Nonvolatile semiconductor memory device and operating method of the same (2015-04-28),

9. 8964459 - Magnetoresistive element and writing method of magnetic memory (2015-02-24),

10. 8901633 - Semiconductor storage device and method for manufacturing the same (2014-12-02),

11. 8829623 - Semiconductor memory device (2014-09-09),

12. 8809931 - Nonvolatile semiconductor memory device (2014-08-19),

13. 8686488 - Nonvolatile semiconductor memory device and method of manufacturing the same (2014-04-01),

14. 8680612 - Semiconductor device and manufacturing method thereof (2014-03-25),

15. 8633535 - Nonvolatile semiconductor memory (2014-01-21),

Title: **Innovative Spirit of Nobutoshi Aoki: Pioneering Semiconductor Technologies**

Introduction

Nobutoshi Aoki, based in Yokohama, Japan, is a prolific inventor with an impressive portfolio of 49 patents. With a focus on semiconductor technology, Aoki has made significant contributions to the field, particularly in the area of semiconductor device design and functionality.

Latest Patents

Among his latest innovations is a method for manufacturing a semiconductor device that incorporates a vertical channel between stacked electrode layers and an insulating layer. This invention describes a semiconductor device that features a substrate supporting a stacked body composed of multiple electrode layers, interspersed with insulating materials. Within this architecture, Aoki has positioned a semiconductor body that exhibits a channel portion extending along the stacking direction, with specific designs for insulating film that enhance charge storage capabilities. His patents emphasize innovations that not only improve efficiency but also elevate the performance of semiconductor devices in modern applications.

Career Highlights

Throughout his career, Nobutoshi Aoki has been associated with prominent organizations such as Kabushiki Kaisha Toshiba and Toshiba Memory Corporation. His work at these companies has allowed him to develop cutting-edge semiconductor technologies, making a significant impact on the industry.

Collaborations

In his journey as an inventor, Aoki has collaborated with notable professionals like Takashi Izumida and Masaki Kondo. These partnerships have fostered an environment of innovation, contributing to the creation of groundbreaking technologies in the realm of semiconductors.

Conclusion

Nobutoshi Aoki remains a key figure in the world of semiconductor innovation. His contributions, reflected in his numerous patents, demonstrate his dedication to advancing technology and fostering collaboration within the industry. As semiconductor applications continue to expand, Aoki's work will undoubtedly play a crucial role in shaping the future landscape of this critical field.

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