The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

Oct. 09, 2008
Applicants:

Nobutoshi Aoki, Yokohama, JP;

Takashi Izumida, Yokohama, JP;

Masaki Kondo, Yokohama, JP;

Fumitaka Arai, Yokohama, JP;

Inventors:

Nobutoshi Aoki, Yokohama, JP;

Takashi Izumida, Yokohama, JP;

Masaki Kondo, Yokohama, JP;

Fumitaka Arai, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11529 (2013.01); H01L 27/11526 (2013.01); H01L 27/11524 (2013.01);
Abstract

According to an aspect of the present invention, there is provided a semiconductor memory device including: a semiconductor substrate having: a contact region; a select gate region; and a memory cell region; a first element isolation region formed in the contact region and having a first depth; a second element isolation region formed in the select gate region and having a second depth; and a third element isolation region formed in the memory cell region and having a third depth which is smaller than the first depth.


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