The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Mar. 06, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventors:

Tsukasa Nakai, Hino, JP;

Jyunichi Ozeki, Yokosuka, JP;

Nobutoshi Aoki, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/02 (2006.01); G11C 5/06 (2006.01); G11C 13/00 (2006.01); G11C 11/16 (2006.01); G11C 14/00 (2006.01); G11C 7/10 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 11/16 (2013.01); G11C 13/0004 (2013.01); G11C 14/0045 (2013.01); G11C 7/1006 (2013.01); G11C 11/5678 (2013.01); G11C 11/02 (2013.01);
Abstract

According to one embodiment, a nonvolatile semiconductor memory device comprises a semiconductor substrate, and a memory cell which is arranged on the semiconductor substrate and comprises a variable resistance element. The variable resistance element comprises a laminated structure including a phase-change element which has at least two different crystalline resistance states by varying a crystalline state, and a magnetoresistive element which has at least two different magnetization resistance states by varying a magnetization state, and applies or does not apply a magnetic field to the phase-change element in accordance with the magnetization state.


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