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For the Inventor, By the Inventor

Taipei, Taiwan

Neng-Tai Shih

USPTO Granted Patents = 12

Average Co-Inventor Count = 3.1

ph-index = 2

Forward Citations = 28(Granted Patents)


Company Filing History:

goldMedal12 out of 2,321 
 
Nan Ya Technology Corporation
 patents

Years Active: 2005-2015

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12 patents (USPTO):Explore Patents
1. 8999733 - Method of forming RRAM structure (2015-04-07),
2. 8901527 - Resistive random access memory structure with tri-layer resistive stack (2014-12-02),
3. 8487290 - RRAM with improved resistance transformation characteristic and method of making the same (2013-07-16),
4. 8395209 - Single-sided access device and fabrication method thereof (2013-03-12),
5. 7993985 - Method for forming a semiconductor device with a single-sided buried strap (2011-08-09),
6. 7759190 - Memory device and fabrication method thereof (2010-07-20),
7. 7449382 - Memory device and fabrication method thereof (2008-11-11),
8. 7408215 - Dynamic random access memory (2008-08-05),
9. 7160804 - Method of fabricating MOS transistor by millisecond anneal (2007-01-09),
10. 6962847 - Method for forming a self-aligned buried strap in a vertical memory cell (2005-11-08),
11. 6946359 - Method for fabricating trench isolations with high aspect ratio (2005-09-20),
12. 6927123 - Method for forming a self-aligned buried strap in a vertical memory cell (2005-08-09),

Title: Neng-Tai Shih: Innovator in Resistive Random Access Memory Technology

Introduction

Neng-Tai Shih is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of resistive random access memory (RRAM) technology. With a total of 12 patents to his name, Shih continues to push the boundaries of innovation in this area.

Latest Patents

Among his latest patents is a method of forming an RRAM structure. This invention includes a resistive layer that consists of a dielectric layer and surplus oxygen ions or nitrogen ions. These ions result from a treatment applied to the dielectric layer after its formation. When a voltage is applied to the RRAM, the oxygen or nitrogen ions occupy vacancies in the dielectric layer, increasing the resistance of the resistive layer. Conversely, when another voltage is applied, these ions are removed from the vacancies, lowering the resistance of the resistive layer. Another notable patent is the resistive random access memory structure with a tri-layer resistive stack, which shares similar principles and innovations.

Career Highlights

Neng-Tai Shih is currently associated with Nan Ya Technology Corporation, where he applies his expertise in RRAM technology. His work has been instrumental in advancing the capabilities of memory storage solutions.

Collaborations

Shih has collaborated with notable colleagues, including Chang-Rong Wu and Sheng-Wei Yang, contributing to various projects and innovations in the field.

Conclusion

Neng-Tai Shih's contributions to resistive random access memory technology highlight his role as a leading inventor in the industry. His innovative patents and collaborations continue to shape the future of memory technology.

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