The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2005
Filed:
Oct. 22, 2003
Sheng-wei Yang, Taipei, TW;
Neng-tai Shih, Taipei, TW;
Wen-sheng Liao, Taipei, TW;
Chih-how Chang, Taipei, TW;
Sheng-Wei Yang, Taipei, TW;
Neng-Tai Shih, Taipei, TW;
Wen-Sheng Liao, Taipei, TW;
Chih-How Chang, Taipei, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A method of fabricating a trench isolation with high aspect ratio. The method comprises the steps of: providing a substrate with a trench; depositing a first isolation layer filling the trench by low pressure chemical vapor deposition; etching the first isolation layer so that its surface is lowered to the opening of the trench; depositing a second isolation layer to fill the trench without voids by high density plasma chemical vapor deposition and achieving global planarization by chemical-mechanical polishing then providing a rapidly annealing procedure. Accordingly, the present invention achieves void-free trench isolation with high aspect ratio.