The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Oct. 26, 2007
Neng-tai Shih, Taipei, TW;
Jeng-ping Lin, Taoyuan, TW;
Neng-Tai Shih, Taipei, TW;
Jeng-Ping Lin, Taoyuan, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A fabrication method of a memory device is disclosed. A substrate having a trench is provided, comprising a trench capacitor, a conductive column, a collar dielectric layer and a top dielectric layer therein. A gate structure with spacers on sidewalls is disposed on the substrate and neighboring the trench. An opening is formed on the substrate between the collar dielectric layer and the gate structure. Next, a portion of the top dielectric layer and the collar dielectric layer is removed to expose a portion of the conductive column. An insulating layer is deposited on the gate structure and the exposed conductive column, filling the opening. The insulating layer is etched to expose a portion of the capacitor-side region of the substrate and the conductive column. A transmissive strap is formed by selective deposition, electrically connecting the capacitor-side region of the substrate and the conductive column.