The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Jul. 02, 2010
Applicants:
Chun-i Hsieh, Taoyuan County, TW;
Chang-rong Wu, Taipei County, TW;
Neng-tai Shih, Taipei, TW;
Inventors:
Assignee:
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/08 (2013.01); H01L 45/1641 (2013.01);
Abstract
An RRAM includes a resistive layer including a dielectric layer and surplus oxygen ions or nitrogen ions from a treatment on the dielectric layer after the dielectric layer is formed. When the RRAM is applied with a voltage, the oxygen ions or nitrogen ions occupy vacancies in the dielectric layer to increase resistance of the resistive layer. When the RRAM is applied with another voltage, the oxygen ions or nitrogen ions are removed from the vacancies to lower the resistance of the resistive layer.