This inventor holds 24 USPTO granted patents and 2 published patent applications, primarily in Memory Device Fabrication. Top assignee: Nan Ya Technology Corporation. Active years: 2004-2015.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Pan-Chiao, TW (2004)
- Taipei Hsien, TW (2007)
- Taipei, TW (2004 - 2008)
- Banciao, TW (2006 - 2012)
- Taipei County, TW (2006 - 2014)
- New Taipei, TW (2013 - 2015)
Company Filing History:
Years Active: 2004-2015
Areas of Expertise:
Title: Innovations of Chang-Rong Wu in Magnetoresistive Random Access Memory
Introduction: Chang-Rong Wu, based in New Taipei, Taiwan, is a prolific inventor, holding an impressive portfolio of 24 patents. His contributions to the field of memory technology showcase his dedication and expertise, particularly in the development of advanced memory storage solutions.
Latest Patents: Among his latest innovations, Wu has introduced groundbreaking methods for fabricating magnetoresistive random access memory (MRAM) elements. This innovative MRAM element includes a unique design featuring a bottom electrode embedded in an insulating layer, an annular reference layer positioned strategically above this electrode, and various layers that enhance its functionality. Another significant patent by Wu details a method of forming a resistive random access memory (RRAM) structure, which demonstrates how treatment on a dielectric layer can increase and decrease resistance through the manipulation of oxygen and nitrogen ions, offering significant advancements in memory technology.
Career Highlights: Throughout his career, Chang-Rong Wu has made remarkable strides in the field of technology while working at Nan Ya Technology Corporation. His innovative designs and methodologies reflect a deep understanding of electronic memory devices and their potential applications, contributing significantly to advancements in the industry.
Collaborations: Wu has also collaborated with notable colleagues, including Chun-I Hsieh and Tzu-En Ho, further enhancing the research and development efforts at Nan Ya Technology Corporation. Together, they have worked on complex projects that continue to push the boundaries of memory technology.
Conclusion: Chang-Rong Wu's contributions to the field of memory technologies, especially in MRAM and RRAM structures, underline his role as a key player in innovation. With a total of 24 patents, his work not only signifies personal achievement but also contributes to the broader landscape of electronic memory solutions, indicating a promising future for continued advancements in this domain.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile