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For the Inventor, By the Inventor

Taipei, Taiwan

Chang-Rong Wu

USPTO Granted Patents = 24

Average Co-Inventor Count = 2.9

ph-index = 4

Forward Citations = 38(Granted Patents)


Location History:

  • Pan-Chiao, TW (2004)
  • Taipei Hsien, TW (2007)
  • Taipei, TW (2004 - 2008)
  • Banciao, TW (2006 - 2012)
  • Taipei County, TW (2006 - 2014)
  • New Taipei, TW (2013 - 2015)

Company Filing History:

goldMedal24 out of 2,305 
 
Nan Ya Technology Corporation
 patents

Years Active: 2004-2015

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24 patents (USPTO):Explore Patents
1. 9070871 - Method for fabricating magnetoresistive random access memory element (2015-06-30),
2. 8999733 - Method of forming RRAM structure (2015-04-07),
3. 8916392 - Magnetoresistive random access memory element and fabrication method thereof (2014-12-23),
4. 8901527 - Resistive random access memory structure with tri-layer resistive stack (2014-12-02),
5. 8535954 - Magnetoresistive random access memory element and fabrication method thereof (2013-09-17),
6. 8487290 - RRAM with improved resistance transformation characteristic and method of making the same (2013-07-16),
7. 8395209 - Single-sided access device and fabrication method thereof (2013-03-12),
8. 8395139 - 1T1R resistive memory device and fabrication method thereof (2013-03-12),
9. 8149614 - Magnetoresistive random access memory element and fabrication method thereof (2012-04-03),
10. 8089060 - Non-volatile memory cell and fabrication method thereof (2012-01-03),
11. 7943917 - Non-volatile memory cell and fabrication method thereof (2011-05-17),
12. 7375017 - Method for fabricating semiconductor device having stacked-gate structure (2008-05-20),
13. 7232718 - Method for forming a deep trench capacitor buried plate (2007-06-19),
14. 7154159 - Trench isolation structure and method of forming the same (2006-12-26),
15. 7138338 - Method and composite hard mask for forming deep trenches in a semiconductor substrate (2006-11-21),

Title: Innovations of Chang-Rong Wu in Magnetoresistive Random Access Memory

Introduction: Chang-Rong Wu, based in New Taipei, Taiwan, is a prolific inventor, holding an impressive portfolio of 24 patents. His contributions to the field of memory technology showcase his dedication and expertise, particularly in the development of advanced memory storage solutions.

Latest Patents: Among his latest innovations, Wu has introduced groundbreaking methods for fabricating magnetoresistive random access memory (MRAM) elements. This innovative MRAM element includes a unique design featuring a bottom electrode embedded in an insulating layer, an annular reference layer positioned strategically above this electrode, and various layers that enhance its functionality. Another significant patent by Wu details a method of forming a resistive random access memory (RRAM) structure, which demonstrates how treatment on a dielectric layer can increase and decrease resistance through the manipulation of oxygen and nitrogen ions, offering significant advancements in memory technology.

Career Highlights: Throughout his career, Chang-Rong Wu has made remarkable strides in the field of technology while working at Nan Ya Technology Corporation. His innovative designs and methodologies reflect a deep understanding of electronic memory devices and their potential applications, contributing significantly to advancements in the industry.

Collaborations: Wu has also collaborated with notable colleagues, including Chun-I Hsieh and Tzu-En Ho, further enhancing the research and development efforts at Nan Ya Technology Corporation. Together, they have worked on complex projects that continue to push the boundaries of memory technology.

Conclusion: Chang-Rong Wu's contributions to the field of memory technologies, especially in MRAM and RRAM structures, underline his role as a key player in innovation. With a total of 24 patents, his work not only signifies personal achievement but also contributes to the broader landscape of electronic memory solutions, indicating a promising future for continued advancements in this domain.

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