The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2013

Filed:

Dec. 06, 2011
Applicants:

Hsin-jung Ho, New Taipei, TW;

Chang-rong Wu, New Taipei, TW;

Wei-chia Chen, Taoyuan County, TW;

Inventors:

Hsin-Jung Ho, New Taipei, TW;

Chang-Rong Wu, New Taipei, TW;

Wei-Chia Chen, Taoyuan County, TW;

Assignee:

Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory structure includes an active area surrounded by first isolation trenches and second isolation trenches; a bit line trench recessed into the active area of the semiconductor substrate; a word line trench recessed into the active area of the semiconductor substrate and being shallower than the bit line trench. The bit line trench and the word line trench together divide the active area into four pillar-shaped sub-regions. A bit line is embedded in the bit line trench. A word line is embedded in the word line trench. A vertical transistor is built in each of the pillar-shaped sub-regions. A resistive memory element is electrically coupled to the vertical transistor.


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