The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2006
Filed:
Feb. 24, 2004
Applicants:
Chien-chang Cheng, Taoyuan, TW;
Shing-yih Shih, Taipei, TW;
Chang-rong Wu, Taipei, TW;
Inventors:
Assignee:
Nanya Technology Corporation, Taoyuon, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A trench isolation structure and a method of forming a trench isolation structure are provided. The method includes providing a substrate having a trench. A polysilicon liner is formed in the trench. A dielectric layer, such as spin-on glass, is formed in the trench upon the polysilicon liner.
Cheng, Chien-Chang. (2006). Trench isolation structure and method of forming the same (U.S. Patent No. 7154159). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7154159
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