The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2007
Filed:
Sep. 17, 2003
Chih-han Chang, Taipei Hsien, TW;
Hsin-jung Ho, Taipei Hsien, TW;
Chang-rong Wu, Taipei Hsien, TW;
Chien-jung Sun, Taipei Hsien, TW;
Chih-Han Chang, Taipei Hsien, TW;
Hsin-Jung Ho, Taipei Hsien, TW;
Chang-Rong Wu, Taipei Hsien, TW;
Chien-Jung Sun, Taipei Hsien, TW;
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Abstract
A method for forming a deep trench capacitor buried plate. A substrate having a pad oxide and a pad nitride is provided. A deep trench is formed in the substrate. A doped silicate film is deposited on a sidewall of the deep trench. A sacrificial layer is deposited in the deep trench, and etched back to expose parts of the doped silicate film. Then, an etching process is performed to remove the exposed doped silicate film and parts of the pad oxide for forming a recess. The sacrificial layer is removed. A silicon nitride layer is deposited to fill the recess and to cover the doped silicate film. Finally, a thermal oxidation process is performed to form a doped ion region. The silicon nitride layer is removed. The doped silicate film is removed.