Chih-Han Chang

Title: Chih-Han Chang: Innovator in Semiconductor Technology

Introduction

Chih-Han Chang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for fabricating advanced capacitor structures. With a total of 3 patents to his name, Chang's work has had a notable impact on the industry.

Latest Patents

Chang's latest patents include a "Method for forming a deep trench capacitor buried plate" and a "Method of fabricating a DRAM cell capacitor." The first patent outlines a detailed process for creating a deep trench capacitor buried plate, which involves forming a deep trench in a substrate, depositing a doped silicate film, and performing various etching and deposition steps to create a doped ion region. The second patent describes a method for fabricating a capacitor of a DRAM cell, which includes forming an insulating layer, depositing a seed layer, and creating a hemispherical silicon grain layer to serve as the lower electrode of the capacitor.

Career Highlights

Chih-Han Chang is currently employed at Nan Ya Technology Corporation, where he continues to innovate in semiconductor technologies. His expertise in capacitor fabrication has positioned him as a key player in the advancement of DRAM technology.

Collaborations

Chang has collaborated with notable colleagues, including Hsin-Chuan Tsai and Hsin-Jung Ho, contributing to various projects that enhance the capabilities of semiconductor devices.

Conclusion

Chih-Han Chang's contributions to semiconductor technology through his innovative patents and collaborative efforts highlight his importance in the field. His work continues to influence the development of advanced electronic components.