The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Apr. 19, 2002
Li-Wu Tsao, Keelung, TW;
Chih-Han Chang, Taipei Hsien, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A method of fabricating a capacitor of a DRAM cell. First, an insulating layer is formed on the semiconductor substrate at the top portion of the trench. Afterward, a seed layer on the ringed insulating layer and the semiconductor substrate at the bottom portion of the trench. A photoresist is coated in the trench at the bottom portion. Next, the seed layer is partially removed to expose the ringed insulating layer while the photoresist is used as the shield. The photoresist is then removed to expose the remaining seed layer at the bottom portion. A hemispherical silicon grain layer is deposited from the remaining seed layer on the semiconductor substrate. Ions are doped the hemispherical silicon grain layer and the semiconductor substrate so as to create a doped area to serve as the lower electrode of the capacitor.