The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Sep. 22, 2011
Hsin-jung Ho, New Taipei, TW;
Jeng-ping Lin, Taoyuan County, TW;
Neng-tai Shih, Taipei, TW;
Chang-rong Wu, New Taipei, TW;
Chiang-hung Lin, New Taipei, TW;
Chih-huang Wu, Taoyuan County, TW;
Hsin-Jung Ho, New Taipei, TW;
Jeng-Ping Lin, Taoyuan County, TW;
Neng-Tai Shih, Taipei, TW;
Chang-Rong Wu, New Taipei, TW;
Chiang-Hung Lin, New Taipei, TW;
Chih-Huang Wu, Taoyuan County, TW;
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Abstract
A single-sided access device includes an active fin structure comprising a source contact area and a drain contact area separated from each other by an isolation region therebetween; a trench isolation structure disposed at one side of the active fin structure, wherein the trench isolation structure intersects with the isolation region between the source contact area and the drain contact area; a sidewall gate disposed under the isolation region and on the other side of the active fin structure opposite to the trench isolation structure so that the active fin structure is sandwiched by the trench isolation structure and the sidewall gate, wherein the sidewall gate has multi-fingers that engage with the active fin structure; and a gate dielectric layer between the sidewall gate and the active fin structure.