Tokyo, Japan

Naoki Yutani

This inventor holds 21 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Mitsubishi Electric Corporation, Mitsubishi Denki Kabushiki Kaisha, Other. Active years: 1991-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Naoki Yutani. Retrieved from https://idiyas.com/inventor/naoki-yutani

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 85.7

 

Average Co-Inventor Count = 2.9

ph-index = 4

Forward Citations = 62(Granted Patents)


Location History:

  • Hyogo, JP (1991)
  • Itami, JP (1991 - 1995)
  • Chiyoda-ku, JP (2011 - 2012)
  • Tokyo, JP (2001 - 2019)

Company Filing History:


Years Active: 1991-2019

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Areas of Expertise:
Silicon Carbide
Semiconductor Device
Pressure Sensor
Epitaxial Wafer
Solid-State Imaging
Fabrication Method
Thermal Pressure
Charge Sweep Sensor
Cell Array
Junction Termination
Oxide Superconducting
21 patents (USPTO):Explore Patents

Title: Naoki Yutani: A Pioneering Innovator in Semiconductor Technology

Introduction

Naoki Yutani is a prominent inventor based in Tokyo, Japan, renowned for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 21 patents, Yutani has established himself as a key figure in the development and innovation of advanced semiconductor devices.

Latest Patents

Yutani's latest inventions include groundbreaking patents such as a "Semiconductor device and method of manufacturing the same." This semiconductor device features an active region within a first conductivity type semiconductor layer and a surrounding termination region, which enhances performance and reliability. Notably, it incorporates a defect detection device along the active region, ensuring quality control through a sophisticated diode structure.

Another important patent by Yutani is the "Method of manufacturing a silicon carbide semiconductor device." This method involves a unique sputtering process where a metal material is carefully applied to a silicon carbide wafer under specific energy conditions. This innovation allows for improved conductivity and functionality of the semiconductor devices produced.

Career Highlights

Throughout his career, Naoki Yutani has made significant strides in the semiconductor industry, working with prestigious companies such as Mitsubishi Electric Corporation and Mitsubishi Denki Kabushiki Kaisha. His work has continually pushed the boundaries of semiconductor technology, enhancing the efficiency and capabilities of various devices.

Collaborations

Yutani has collaborated with esteemed professionals in his field, including Kenichi Ohtsuka and Hiroshi Watanabe. These collaborations have fostered a creative environment that has led to the development of innovative solutions and advancements in semiconductor technology.

Conclusion

Naoki Yutani's contributions to the semiconductor industry underline his importance as an inventor. With a formidable collection of patents and a career defined by collaboration and innovation, he continues to pave the way for future advancements in semiconductor technology. His work not only advances the field but also provides a foundation for future research and development in the ever-evolving tech landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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