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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9685566 B1

PDFFull Text
Date of Patent:
Jun. 20, 2017

Filed:

Nov. 09, 2012

Method of manufacturing silicon carbide semiconductor device

Applicants:

Daisuke Chikamori, Tokyo, JP;

Yasuhiko Nishio, Tokyo, JP;

Naoki Yutani, Tokyo, JP;

Inventors:

Daisuke Chikamori, Tokyo, JP;

Yasuhiko Nishio, Tokyo, JP;

Naoki Yutani, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Studebaker & Brackett PC

Primary Examiner:

Julio J Maldonado

Assistant Examiner:

Stanetta Isaac

Int. Cl.
CPC ...
H01L 21/16 (2006.01); H01L 29/872 (2006.01); H01L 21/04 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); C23C 14/18 (2006.01); C23C 14/34 (2006.01); C23C 14/35 (2006.01); H01J 37/32 (2006.01); H01J 37/34 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); C23C 14/185 (2013.01); C23C 14/3492 (2013.01); C23C 14/35 (2013.01); H01J 37/32082 (2013.01); H01J 37/34 (2013.01); H01L 21/0495 (2013.01); H01L 29/47 (2013.01); H01L 29/6606 (2013.01); H01L 29/1608 (2013.01);
Abstract

A target made of a metal material is sputtered to form a metal film on a silicon carbide wafer. At this time, the metal film is formed under a condition that an incident energy of incidence, on the silicon carbide wafer, of the metal material sputtered from the target and a sputtering gas flowed in through a gas inlet port is lower than a binding energy of silicon carbide, and more specifically lower than 4.8 eV. For example, the metal film is formed while a high-frequency voltage applied between a cathode and an anode is set to be equal to or higher than 20V and equal to or lower than 300V.

Find Patent Forward Citations

Chikamori, Daisuke. (2017). Method of manufacturing silicon carbide semiconductor device (U.S. Patent No. 9685566). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9685566

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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