The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Sep. 01, 2009
Yoshinori Matsuno, Tokyo, JP;
Kenichi Ohtsuka, Tokyo, JP;
Naoki Yutani, Tokyo, JP;
Kenichi Kuroda, Tokyo, JP;
Hiroshi Watanabe, Tokyo, JP;
Shozo Shikama, Tokyo, JP;
Yoshinori Matsuno, Tokyo, JP;
Kenichi Ohtsuka, Tokyo, JP;
Naoki Yutani, Tokyo, JP;
Kenichi Kuroda, Tokyo, JP;
Hiroshi Watanabe, Tokyo, JP;
Shozo Shikama, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An object is to provide a method for manufacturing a silicon carbide semiconductor device in which a time required for removing a sacrificial oxide film can be shortened and damage to a surface of the silicon carbide layer can be reduced. The method for manufacturing a silicon carbide semiconductor device includes: (a) performing ion implantation to a silicon carbide layer; (b) performing activation annealing to the ion-implanted silicon carbide layer; (c) removing a surface layer of the silicon carbide layer, to which the activation annealing has been performed, by dry etching; (d) forming a sacrificial oxide film on a surface layer of the silicon carbide layer, to which the dry etching has been performed, by performing sacrificial oxidation thereto; and (e) removing the sacrificial oxide film by wet etching.