The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Dec. 22, 2011
Hiroshi Watanabe, Tokyo, JP;
Naoki Yutani, Tokyo, JP;
Yoshiyuki Nakaki, Tokyo, JP;
Kenichi Ohtsuka, Tokyo, JP;
Hiroshi Watanabe, Tokyo, JP;
Naoki Yutani, Tokyo, JP;
Yoshiyuki Nakaki, Tokyo, JP;
Kenichi Ohtsuka, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device that can achieve a high-speed operation at a time of switching, and the like. The semiconductor device includes: a p-type buried layer buried within an n-type semiconductor layer; and a p-type surface layer formed in a central portion of each of cells. In a contact cell, the p-type buried layer is in contact with the p-type surface layer. The semiconductor device further includes: a p-type contact layer formed on the p-type surface layer of the contact cell; and an anode electrode provided on the n-type semiconductor layer. The anode electrode forms a Schottky junction with the n-type semiconductor layer and forms an ohmic junction with the p-type contact layer.