The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Sep. 21, 2011
Yoichiro Tarui, Tokyo, JP;
Eisuke Suekawa, Tokyo, JP;
Naoki Yutani, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
Yoichiro Tarui, Tokyo, JP;
Eisuke Suekawa, Tokyo, JP;
Naoki Yutani, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
It is expected that both reduction of the resistance of a source region and reduction of a leakage current in a gate oxide film be achieved in an MOSFET in a silicon carbide semiconductor device. A leakage current to occur in a gate oxide film of the MOSFET is suppressed by reducing roughness at an interface between a source region and the gate oxide film. If an impurity concentration is to become high at a surface portion of the source region, the gate oxide film is formed by dry oxidation or CVD process. If the gate oxide film is formed by wet oxidation, the impurity concentration at the surface portion of the source region is controlled at a low level.